BJT
Across
- 2. The ratio of collector current to base current.
- 4. The junction condition necessary to inject the majority carriers into the base.
- 5. The minimum collector-emitter voltage when the transistor is fully ON.
- 8. The physical phenomenon responsible for variation in collector current due to a change in collector-base voltage.
- 9. The very narrow central region that allows most injected carriers to pass through with minimal recombination.
- 10. The ratio of collector current to emitter current.
- 11. A three-layer, two-junction semiconductor device that uses both electrons and holes as charge carriers (use abbreviation).
- 12. The extrapolated voltage at which collector current curves meet on the negative voltage axis.
- 14. The part of the transistor designed to inject a large number of charge carriers.
- 15. This transistor current is approximately equal to the emitter current.
- 18. A BJT type, where electrons are the majority charge carriers.
- 20. The mode used for linear amplification.
- 22. Charge carriers present in small concentrations in a doped semiconductor region.
- 24. The process of increasing signal magnitude using active region operation.
- 25. The steady-state operating point of a transistor without input signal.
- 27. The ratio of change in collector-emitter voltage (output voltage) to change in collector current (output current).
- 28. The collector-base junction condition required in active mode for amplification.
- 29. The operating mode where both junctions are forward biased.
Down
- 1. Charge carriers present in large concentrations in a doped semiconductor region.
- 3. The small controlling current that regulates collector current.
- 6. The graph showing variation of output current (collector current) with output voltage (collector-emitter voltage).
- 7. The apparent increase in collector current due to a reduction in the effective base width.
- 13. A straight line representing all possible operating points of a transistor for a given circuit.
- 16. The process occurring in the base where electrons and holes neutralize each other.
- 17. The mode of operation where both junctions are reverse biased, and the collector current is nearly zero.
- 19. The three physical regions that form a BJT device structure.
- 21. The graph showing the variation of input current (base current) with input voltage (base-emitter voltage).
- 23. A BJT type, where the majority charge carriers are holes flowing from emitter to collector.
- 26. The ratio of change in base-emitter voltage (input voltage) to change in base current (input current).