BJT

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Across
  1. 2. The ratio of collector current to base current.
  2. 4. The junction condition necessary to inject the majority carriers into the base.
  3. 5. The minimum collector-emitter voltage when the transistor is fully ON.
  4. 8. The physical phenomenon responsible for variation in collector current due to a change in collector-base voltage.
  5. 9. The very narrow central region that allows most injected carriers to pass through with minimal recombination.
  6. 10. The ratio of collector current to emitter current.
  7. 11. A three-layer, two-junction semiconductor device that uses both electrons and holes as charge carriers (use abbreviation).
  8. 12. The extrapolated voltage at which collector current curves meet on the negative voltage axis.
  9. 14. The part of the transistor designed to inject a large number of charge carriers.
  10. 15. This transistor current is approximately equal to the emitter current.
  11. 18. A BJT type, where electrons are the majority charge carriers.
  12. 20. The mode used for linear amplification.
  13. 22. Charge carriers present in small concentrations in a doped semiconductor region.
  14. 24. The process of increasing signal magnitude using active region operation.
  15. 25. The steady-state operating point of a transistor without input signal.
  16. 27. The ratio of change in collector-emitter voltage (output voltage) to change in collector current (output current).
  17. 28. The collector-base junction condition required in active mode for amplification.
  18. 29. The operating mode where both junctions are forward biased.
Down
  1. 1. Charge carriers present in large concentrations in a doped semiconductor region.
  2. 3. The small controlling current that regulates collector current.
  3. 6. The graph showing variation of output current (collector current) with output voltage (collector-emitter voltage).
  4. 7. The apparent increase in collector current due to a reduction in the effective base width.
  5. 13. A straight line representing all possible operating points of a transistor for a given circuit.
  6. 16. The process occurring in the base where electrons and holes neutralize each other.
  7. 17. The mode of operation where both junctions are reverse biased, and the collector current is nearly zero.
  8. 19. The three physical regions that form a BJT device structure.
  9. 21. The graph showing the variation of input current (base current) with input voltage (base-emitter voltage).
  10. 23. A BJT type, where the majority charge carriers are holes flowing from emitter to collector.
  11. 26. The ratio of change in base-emitter voltage (input voltage) to change in base current (input current).