Edassignment1

3. The depletion mode n-MOS differs from enhancement mode n-MOS in________
4. The gate voltage in a JFET at which drain current becomes zero is called ___ voltage.
8. In an ideal small signal equivalent circuit, at low frequency ___ becomes open circuit
9. Energy gap between conduction band and free space is_____________
11. A MOSFET uses the electric field of a ______ to control the channel current
12. ______indicates the amount of control, the gate has on drain current.
14. The effective channel length of a MOSFET in saturation decreases with increase in
15. The impedance at the input of n-MOS transistor is more than that of _______

1. Fermi level (Ef) for a p-type substrate is very close to_________ Band
2. GaAs material referred to as a __________ substrate.
5. In ideal C-V characteristics, the _____ condition is obtained for a negative gate bias.
6. __________ acts like a barrier that opposes the flow of electrons from n region and the holes from p region
7. The channel transit time is normally not the limiting factor except in ____ frequency devices
10. Drain current is controlled by Gate Voltage. Hence JFET is _______ Controlled device.
13. The ideal C-V characteristics are obtained for MOS capacitor with an ______ substrate by changing the sign of voltage axis