FT IV

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Across
  1. 2. Basic logic gate built using one NMOS and one PMOS
  2. 5. Pattern transfer step where unprotected regions are removed
  3. 8. Oxide layer grown thermally on silicon
  4. 9. Technology that combines both NMOS and PMOS transistors
Down
  1. 1. Spreading of junctions due to atomic movement at high temperature
  2. 3. Minimum gate voltage required to form a conducting channel
  3. 4. Process of driving dopant ions into the wafer at high energy
  4. 6. MOS device where electrons are the majority carriers
  5. 7. MOS device where holes are the majority carriers
  6. 9. Wafer film deposition using reactive precursor gases (abbr.)