MOS Transistor - Crossword

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Across
  1. 4. In a 3-input CMOS NAND gate, the threshold voltage of the N transistors will differ even though they may be designed and manufactured identically. What causes this effect? (4,5)
  2. 7. What the gate in a MOS transistor is made of (15,6)
  3. 11. If we were to feed the output of a CMOS inverter to a CMOS transmission gate, the resulting device is a ____ inverter (8)
  4. 12. What is "F" in a MOSFET? (5)
  5. 13. Another term used for the substrate of a MOS transistor (4)
  6. 14. In the saturation region, the current IDS has a square-law relation with this voltage (3)
  7. 15. An electron accelerating in an electric field in a short channel is called ____ (3)
Down
  1. 1. PMOS transistors are slower than NMOS because holes have lower ____ than electrons (8)
  2. 2. If an N-channel transistor has a positive IDS value when VGS=0, it must be of this type
  3. 3. The flow of current from MOS gate to source or drain in a transistor whose gate oxide is very thin (9)
  4. 5. At very small geometries, we may need to use this type of transistor in which the gate surrounds the channel on three sides (6)
  5. 6. In a CMOS inverter, if the substrate is P-type then the PMOST is built in ___ (1,4)
  6. 8. This SPICE DC parameter tells us how much the channel length would vary with applied drain-to-source voltage (5)
  7. 9. In a CMOS transistor, if both NMOS and PMOS are in saturation region, this phenomenon has occurred (5,7)
  8. 10. In an NMOS transistor, when gate-to-source voltage is increased beyond the threshold voltage, the transistor is in this mode (9)