Across
- 4. Ratio of photoelectrons to incident photons x100%
- 6. Process necessary at Si/SiO2 interfaces to prevent recombination
- 8. Bias that turns high to clear the sense node
- 9. p-epi or VBB
- 12. 100% on BST sensors
- 13. Region where CI clocks transfer charge
- 15. Process used to activate boron implanted on the wafer backside
Down
- 1. Circuit element powered by VDD and VSS
- 2. Type of sensor needed for UV detection
- 3. Gate that permits charge to transfer from vertical to horizontal register
- 5. Bias that defines the sense node potential
- 7. Implant where photocharge is stored for transfer
- 9. Dielectric material between metal layers ("SOG")
- 10. Material that defines the CI gate circuitry
- 11. Region where CR and CRL are found
- 14. VDR
