CIA MODULE 5

1234567891011121314151617181920
Across
  1. 2. Process of transferring a geometric pattern onto a semiconductor wafer
  2. 3. Rate at which process gas is supplied to a reaction chamber
  3. 5. Low-pressure environment used in many dry etching and deposition systems
  4. 7. Liquid used to dissolve or clean away certain materials or residues
  5. 9. Highly reactive neutral species that can participate in plasma etching
  6. 11. Equipment used to align a photomask with a wafer
  7. 14. Cross-sectional shape of a feature formed by etching
  8. 15. Chemical substance used to remove material during wet etching
  9. 17. Material used to protect selected regions during a fabrication process
  10. 18. Equipment that converts source material into vapor for physical deposition
  11. 19. Initial formation of small stable clusters during thin-film growth
  12. 20. Removal of material extending beneath a patterned protective layer
Down
  1. 1. Material that settles again on a surface after being removed during processing
  2. 4. Vertical or sloped surface along the edge of an etched feature
  3. 6. Consistency of etch depth or deposited film thickness across a wafer
  4. 8. Distance between the top and bottom surfaces of a thin film
  5. 10. Process by which atoms or molecules become electrically charged
  6. 12. Attraction that helps a deposited film remain attached to its substrate
  7. 13. Localized concave removal of material during chemical-mechanical planarization
  8. 16. Physical removal of atoms from a solid target by energetic particle bombardment