Crystallography and Semiconductor Physics

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Across
  1. 2. having two /more lattice points per unit cell
  2. 4. have very large energy gap
  3. 6. level created above fermi level in p-type semiconductor
  4. 7. probability of occupancy at T>0K
  5. 9. must required for crystal formation
  6. 11. distribution of electrons among energy levels as a function of --is Fermi Dirac distribution function
  7. 15. space lattice+basis
  8. 17. smallest volume that carries a full description of the entire lattice the plane
  9. 18. number of electrons and holes are ---- for intrinsic semiconductor
  10. 21. band between conduction band and valence band
  11. 22. for f(E)=0, energy levels are
  12. 27. volume occupied by the atoms in the unit cell
  13. 30. having coordination number 8
  14. 32. have absence of forbidden band
  15. 33. actual arrangement of atoms
  16. 34. Number of nearest neighbouring atoms
  17. 37. group of closely spaced discrete energy levels
  18. 38. crystal system having 4 bravais lattices
  19. 39. for f(E)=1, energy levels are
  20. 40. unit cell whose volume contains only one lattice point
  21. 41. APF is 0.52
Down
  1. 1. 14 different ways of arranging identical points in 3 dimensional space
  2. 3. perpendicular distance between neighboring planes
  3. 5. 3dimensional network of regularly arranged points
  4. 8. band consisting of energies valence electrons
  5. 10. half the distance between two neighboring atoms
  6. 12. position of fermi level in intrinsic semiconductor lies ------of C.B and V.B
  7. 13. No 2 electrons will have same energy ,this statement is known as
  8. 14. three smallest integers representing position and orientation
  9. 16. force acting due to applied magnetic field
  10. 19. group of atoms associated with every lattice point
  11. 20. dimensions of the unit cell
  12. 21. having void space 48%
  13. 23. crystal system having all edges and angles different
  14. 24. gave the condition for in phase scattering of X-rays
  15. 25. lowest unfilled energy band
  16. 26. potential difference generated due to applied magnetic field in a conductor carrying current
  17. 28. uppermost occupied energy level in conductors at 0K
  18. 29. level created below fermi level in n type semiconductor
  19. 31. having 4 atoms per unit cell
  20. 35. crystal system having all edges same and all angles also same but not equal to 90 degree
  21. 36. vacant space left unutilized in the unit cell