Crystallography and Semiconductor Physics

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Across
  1. 3. crystal system having 4 bravais lattices
  2. 6. level created above fermi level in p-type semiconductor
  3. 8. for f(E)=0, energy levels are
  4. 11. band between conduction band and valence band
  5. 12. position of fermi level in intrinsic semiconductor lies ------of C.B and V.B
  6. 13. probability of occupancy at T>0K
  7. 19. No 2 electrons will have same energy ,this statement is known as
  8. 23. three smallest integers representing position and orientation
  9. 25. for f(E)=1, energy levels are
  10. 30. 3dimensional network of regularly arranged points
  11. 31. volume occupied by the atoms in the unit cell
  12. 33. group of atoms associated with every lattice point
  13. 34. crystal system having all edges and angles different
  14. 35. having 4 atoms per unit cell
  15. 36. smallest volume that carries a full description of the entire lattice the plane
  16. 38. vacant space left unutilized in the unit cell
  17. 39. potential difference generated due to applied magnetic field in a conductor carrying current
  18. 41. band consisting of energies valence electrons
  19. 42. have absence of forbidden band
Down
  1. 1. 14 different ways of arranging identical points in 3 dimensional space
  2. 2. level created below fermi level in n type semiconductor
  3. 4. crystal system having all edges same and all angles also same but not equal to 90 degree
  4. 5. distribution of electrons among energy levels as a function of --is Fermi Dirac distribution function
  5. 7. space lattice+basis
  6. 9. perpendicular distance between neighboring planes
  7. 10. having two /more lattice points per unit cell
  8. 14. Number of nearest neighbouring atoms
  9. 15. half the distance between two neighboring atoms
  10. 16. having coordination number 8
  11. 17. uppermost occupied energy level in conductors at 0K
  12. 18. group of closely spaced discrete energy levels
  13. 20. lowest unfilled energy band
  14. 21. have very large energy gap
  15. 22. force acting due to applied magnetic field
  16. 24. dimensions of the unit cell
  17. 26. having void space 48%
  18. 27. must required for crystal formation
  19. 28. APF is 0.52
  20. 29. actual arrangement of atoms
  21. 32. unit cell whose volume contains only one lattice point
  22. 37. gave the condition for in phase scattering of X-rays
  23. 40. number of electrons and holes are ---- for intrinsic semiconductor