Microwave Devices

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Across
  1. 5. Tunnel diodes requires fabrication with----------------semiconductors.
  2. 7. IMPATT diodes may be improved for noise and stability in -------------------- diode.
  3. 10. IMPATT diodes possess a special feature of ------------------ NDR.
Down
  1. 1. Backward diodes possess low-------------noise.
  2. 2. --------------- diodes work on both Tunneling and Transit-Time effect.
  3. 3. Electrons generated via avalanche multiplication drift through the intrinsic region in a ------------diode.
  4. 4. Tunnel Diodes comprises Tunneling and--------------currents ideally.
  5. 6. In Backward diode, the reverse current increases approximately ----------------with the voltage.
  6. 8. Avalanche multiplication is the process in the back-end in -------------- Diode.
  7. 9. Tunneling probability is ------ when energy band gap and  effective mass is low.