Across
- 2. WBG technology with greater electron mobility
- 4. conventional power MOSFET technology
- 6. structure used to achieve normally off behavior in GaN HEMT
- 8. resistance related to conduction losses
Down
- 1. internal parameter affecting switching times
- 3. silicon structure modification
- 5. commonly used lateral GaN structure
- 7. physical characteristic making it attractive for higher temperatures and frequencies