Across
- 2. • Voltage regulator diode.
- 3. • Energy difference between conduction and valence band.
- 6. • Carrier concentration increases with this parameter.
- 9. • Carrier motion due to concentration gradient.
- 12. • Basic logic gate that inverts input.
- 13. • Pure semiconductor without impurities.
- 15. • Contact with linear V–I characteristics.
- 16. • Majority carrier in P-type semiconductor.
- 17. • Metal Oxide Semiconductor Field Effect Transistor.
- 18. • Exclusive-NOT quantum gate (Controlled NOT).
- 19. CLUES (20 Marks)
- 20. • Gate giving output 1 when at least one input is 1.
- 22. • Junction Field Effect Transistor (abbreviation).
- 23. • Field Effect Transistor (abbreviation).
Down
- 1. • Basic diode formed by joining P and N regions.
- 4. • Basic logic gate that gives output 1 only when both inputs are 1.
- 5. • Current due to minority carriers in PN junction.
- 7. • Semiconductor formed by adding impurities.
- 8. • Opposite of direct band gap semiconductor.
- 10. • Metal–semiconductor junction diode.
- 11. • Carrier motion due to electric field.
- 14. • Universal logic gate (NOT + AND combination).
- 21. • Bipolar Junction Transistor (abbreviation).
