Across
- 3. band consisting of valence electrons
- 5. lowest unfilled energy band
- 6. for f(E)=0, energy levels are
- 9. group of closely spaced discrete energy levels
- 12. force acting due to applied magnetic field
- 14. level created above fermi level in p-type semiconductor
- 15. have large energy gap
- 16. level created below fermi level in n type semiconductor
- 17. highest occupied energy level
Down
- 1. number of electrons and holes for intrinsic semiconductor
- 2. for f(E)=1, energy levels are
- 4. have absence of forbidden band
- 7. distribution of electrons among energy levels as a function of --is Fermi Dirac distribution function
- 8. probability of occupancy at T>0K
- 10. potential difference generated due to applied magnetic field in a conductor carrying current
- 11. position of fermi level in intrinsic semicondutor lies ---of C.B and V.B
- 13. band between conduction and valence band
