Across
- 6. have absence of forbidden band
- 7. for f(E)=0, energy levels are
- 8. band between conduction and valence band
- 10. distribution of electrons among energy levels as a function of --is Fermi Dirac distribution function
- 11. number of electrons and holes for intrinsic semiconductor
- 13. have large energy gap
- 14. band consisting of valence electrons
- 15. potential difference generated due to applied magnetic field in a conductor carrying current
Down
- 1. for f(E)=1, energy levels are
- 2. uppermost occupied energy level
- 3. level created above fermi level in p-type semiconductor
- 4. probability of occupancy at T>0K
- 5. force acting due to applied magnetic field
- 6. lowest unfilled energy band
- 7. group of closely spaced discrete energy levels
- 9. level created below fermi level in n type semiconductor
- 12. position of fermi level in intrinsic semicondutor lies ---of C.B and V.B
